Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As single quantum well structures
نویسندگان
چکیده
منابع مشابه
A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
Based on carrier rate equation, a new model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN multi-quantum-well structures. From the study of TRPL curves at different temperatures, it is found that both radiative and non-radiative recombination coefficients vary from low temperature to room temperature. The variation...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1994
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.357826